Mötesplats Rydberg - Vanya Darakchieva - Ultrawide bandgap semiconductors: Challenges and opportunities for future energy applications

Tuesday 31 Aug 2021, 15:00 → 16:00 Europe/Stockholm

Digital

Climate change induced by fossil fuel use threatens the well-being and very existence of our societies. Ultrawide bandgap semiconductors (UWBS) transpire as key materials in future electronic devices with high current-voltage ratings, reliability, and efficiency, needed to enable a carbon-emission-free power infrastructure. This talk will illuminate current, and future research on UWBS. Novel approaches for scalable and adaptive group-III nitride material technology for high-power and rf electronics will be highlighted. Unconventional and unprecedented semiconductor properties emerge from a new generation of low-symmetry high quality single crystalline group-III oxides. New physics in low-symmetry materials is discussed which may offer new concepts and approaches for nanoscale devices. Challenges such as growth and characterization and opportunities such as novel nanoscale device architectures will be discussed. Pushing the envelope for theoretical understanding and experimental investigation, here advanced Terahertz Ellipsometry developments of the optical Hall effect and paramagnetic electron spin resonance for characterization of charge carrier, defect, and electronic properties in low-dimensional and low-symmetry materials and device structures are presented.  Phonons, band-to-band transition, exciton, plasmon-phonon coupling, free and confined charge carrier properties, and localized spins in low-symmetry UWBS are discussed.

Zoom link: https://lu-se.zoom.us/j/910953381